| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5311 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5315 NX5315EH-AZ NX5315EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX6406GK-AZ NX6406 NX6406GH-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5501EK-AZ NX5501 NX5501EH-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| FTM-9412P-F20 |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| DS1884AT DS1884TT DS1884ATT |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
| FTM-9412P-F10 FTM-9412P-F10DC FTM-9412P-F10E FTM-9 |
(FTM-9412P-x10xx) SFF GE-PON Px10 ONU Transceiver
|
Fiberxon
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts
Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|
